This inventor holds 1 USPTO granted patent. Top assignee: Csmc Technologies Fab2 Co., Ltd.. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Mei Yuan: Semiconductor Device Innovation
Introduction
Mei Yuan is an inventor associated with Wuxi, China, and CSMC Technologies Fab2 Co., Ltd. Her patent work focuses on semiconductor device design and manufacturing.
Latest Patents
Yuan is named on one patent, “Semiconductor Device and Preparation Method Therefor.” The invention places a second well region between first well regions to improve breakdown voltage. It also shapes the second well region so that the adjacent first well region has a wider upper surface, increasing the current path through the drift region when the device is on. This design aims to reduce on-resistance while maintaining improved breakdown performance.
Career Highlights
Yuan’s recorded patent contribution reflects work on semiconductor structures and their preparation methods. The patent describes a design intended to balance breakdown voltage and on-resistance in a semiconductor device.
Collaborations
Yuan’s listed coworkers include Huajun Jin and Liang Song. The patent record connects her work with CSMC Technologies Fab2 Co., Ltd.
Conclusion
Mei Yuan’s patent presents a semiconductor device design that seeks to improve breakdown voltage while reducing on-resistance through carefully shaped well regions.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile