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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12777673 B1

PDFFull Text
Date of Patent:
Oct. 27, 2026

Filed:

Dec. 14, 2022

Semiconductor device and preparation method therefor

Applicant:

Csmc Technologies Fab2 Co., Ltd., Wuxi, CN;

Inventors:

Huajun Jin, Wuxi, CN;

Liang Song, Wuxi, CN;

Yongshun Li, Wuxi, CN;

Mei Yuan, Wuxi, CN;

Yanan Wang, Wuxi, CN;

Lin Luo, Wuxi, CN;

Qiang Zhang, Wuxi, CN;

Assignee:

CSMC TECHNOLOGIES FAB2 CO., LTD., Wuxi, CN;

Attorneys:

Christopher R. Carroll

Carroll, Hoette & Butscher, LLC

Primary Examiner:

Thao P Le

Int. Cl.
CPC ...
H01L 29/78 (2006.01); H10D 30/01 (2025.01); H10D 30/65 (2025.01); H10D 62/10 (2025.01);
U.S. Cl.
CPC ...
H10D 30/65 (2025.01); H10D 30/0281 (2025.01); H10D 62/10 (2025.01);
Abstract

The present disclosure involves a semiconductor device and a manufacturing method thereof. A second well region is inserted between first well regions of a semiconductor device to improve the breakdown voltage of the device, and at the same time, the dimension of the upper surface of the second well region in the width direction of the device's conductive channel is set to be smaller than the dimension of the lower surface of the second well region in the width direction of the device's conductive channel to increase the dimension of the upper surface of the adjacent first well region in the width direction of the device's conductive channel. That is, the path width of the current flowing through the upper surface of the drift region is increased when the device is on, and thus the device's on-resistance is reduced.

Find Patent Forward Citations

Jin, Huajun. (2026). Semiconductor device and preparation method therefor (U.S. Patent No. 12777673). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12777673

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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