Mei Yee Shek

Title: Mei Yee Shek: Innovator in Semiconductor Technology

Introduction

Mei Yee Shek is a prominent inventor based in Burlingame, CA (US). She has made significant contributions to the field of semiconductor technology. Her innovative work focuses on enhancing the properties of semiconductor devices through advanced materials and methods.

Latest Patents

Mei Yee Shek holds a patent titled "Control of semiconductor device isolation properties through incorporation of fluorine in peteos films." This patent describes a method and apparatus for reducing oxide traps within a silicon oxide film by incorporating a selected level of fluorine. The process involves distributing a fluorine source into a processing chamber at a specific rate, flowing a process gas that includes a silicon source, an oxygen source, and the fluorine source, and maintaining suitable conditions for depositing a silicon oxide film. The preferred level of fluorine incorporated into the film ranges between 1×10 atoms/cm and 1×10 atoms/cm. This innovation is particularly valuable in the development of composite layer premetal dielectric films.

Career Highlights

Mei Yee Shek is currently employed at Applied Materials, Inc., where she continues to advance her research in semiconductor technologies. Her work has been instrumental in improving device performance and reliability.

Collaborations

Some of her notable coworkers include Chris Ngai and Joel Glenn, who contribute to the collaborative environment at Applied Materials, Inc. Their combined expertise fosters innovation and drives the development of cutting-edge technologies.

Conclusion

Mei Yee Shek is a trailblazer in the semiconductor industry, with her patent showcasing her innovative approach to enhancing device isolation properties. Her contributions are vital to the ongoing advancements in semiconductor technology.