The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2002
Filed:
Sep. 04, 1997
Chris Ngai, Burlingame, CA (US);
Joel Glenn, Little Elm, TX (US);
Mei Yee Shek, Burlingame, CA (US);
Judy Huang, Los Gatos, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method and apparatus for reducing oxide traps within a silicon oxide film by incorporating a selected level of fluorine in the silicon oxide film. The method includes the steps of distributing a fluorine source to a processing chamber at a selected rate with the rate being chosen according to the desired level of fluorine to be incorporated into the film, flowing a process gas including a silicon source, an oxygen source and the fluorine source into the processing chamber, and maintaining a deposition zone within the chamber at processing conditions suitable to deposit a silicon oxide film having the selected level of fluorine incorporated into the film over a substrate disposed in the chamber. In a preferred embodiment, the selected level of fluorine incorporated into the film is between 1×10 atoms/cm and 1×10 atoms/cm . In another preferred embodiment the silicon oxide film is deposited as a first layer of a composite layer premetal dielectric film.