Megan L Hoarfrost

Title: Megan L Hoarfrost: Innovator in Substrate Doping Technology

Introduction

Megan L Hoarfrost is a notable inventor based in Minneapolis, MN (US). She has made significant contributions to the field of materials science, particularly in the area of substrate doping. Her innovative approach has led to the development of a unique method that enhances the performance of various electronic materials.

Latest Patents

Megan holds a patent for her invention titled "Doping of a substrate via a dopant containing polymer film." This patent describes a method for doping a substrate by applying a coating of a composition that includes a dopant-containing polymer and a non-polar solvent. The substrate is then annealed at a temperature ranging from 750 to 1300°C for a duration of 1 second to 24 hours, allowing the dopant to diffuse into the substrate. Notably, the dopant-containing polymer is free of nitrogen and silicon, and the method does not require the formation of an oxide capping layer prior to annealing. This innovative technique has the potential to improve the efficiency and functionality of electronic devices.

Career Highlights

Throughout her career, Megan has worked with prestigious organizations, including the University of California and Rohm and Haas Electronics Materials LLC. Her experience in these institutions has allowed her to refine her skills and contribute to groundbreaking research in materials science.

Collaborations

Megan has collaborated with esteemed colleagues such as Rachel A Segalman and Ali Javey. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Megan L Hoarfrost is a pioneering inventor whose work in substrate doping technology has the potential to revolutionize the electronics industry. Her contributions reflect a commitment to advancing materials science and enhancing the performance of electronic devices.