Meenakshisundaram Gandhi

Title: Meenakshisundaram Gandhi: Innovator in Advanced Materials

Introduction

Meenakshisundaram Gandhi is a prominent inventor based in Austin, TX, known for his contributions to the field of advanced materials and nanotechnology. With a total of 4 patents to his name, he has made significant strides in developing innovative methods for patterning and depositing silicon-containing films.

Latest Patents

Gandhi's latest patents include a method of forming patterns using block copolymers. This method provides a technique for patterning a layered structure, which involves performing photolithography to create a developed prepattern layer on a substrate. The process includes modifying the prepattern layer to form inorganic material guides, casting a self-assembling block copolymer, and selectively removing portions of the copolymer to create patterns suitable for sub-50 nm layered structures. Another notable patent is for atomic layer deposition of silicon and silicon-containing films. This method outlines a process for depositing these films using atomic layer deposition (ALD), which involves a series of steps to achieve the desired film thickness while managing by-products effectively.

Career Highlights

Meenakshisundaram Gandhi is currently employed at Tokyo Electron Limited, where he continues to push the boundaries of material science. His work has been instrumental in advancing technologies that are critical for various applications in electronics and nanotechnology.

Collaborations

Gandhi has collaborated with notable colleagues, including Raymond Joe and Benjamen M Rathsack, contributing to a dynamic research environment that fosters innovation and creativity.

Conclusion

Meenakshisundaram Gandhi's work exemplifies the spirit of innovation in the field of advanced materials. His patents reflect a commitment to developing cutting-edge technologies that have the potential to revolutionize various industries.