The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2015

Filed:

May. 15, 2012
Applicants:

Benjamen M. Rathsack, Austin, TX (US);

Mark H. Somervell, Austin, TX (US);

Meenakshisundaram Gandhi, Austin, TX (US);

Inventors:

Benjamen M. Rathsack, Austin, TX (US);

Mark H. Somervell, Austin, TX (US);

Meenakshisundaram Gandhi, Austin, TX (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/26 (2006.01); G03F 7/00 (2006.01); G03F 7/20 (2006.01); G03F 7/40 (2006.01);
U.S. Cl.
CPC ...
G03F 7/40 (2013.01); G03F 7/0002 (2013.01); G03F 7/2041 (2013.01); Y10T 428/24802 (2015.01);
Abstract

A method for patterning a layered structure is provided that includes performing photolithography to provide a developed prepattern layer on a horizontal surface of an underlying substrate, modifying the prepattern layer to form spaced apart inorganic material guides, casting and annealing a layer of a self-assembling block copolymer to form laterally-spaced cylindrical features, forming a pattern by selectively removing at least a portion of one block of the self-assembling block copolymer, and transferring the pattern to the underlying substrate. The method is suitable for making sub-50 nm patterned layered structures.


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