Md Imran Siddiqui

Title: Md Imran Siddiqui: Innovator in Semiconductor Technology

Introduction

Md Imran Siddiqui is a notable inventor based in Jharkhand, India. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique semiconductor device that enhances performance and efficiency.

Latest Patents

Md Imran Siddiqui holds a patent for a semiconductor device having a super-junction in the drift region with decreasing doped sub-regions widths. This semiconductor device includes a substrate structure, a gate structure, a drift region, and a drain region within the substrate structure. The device features two isolation structures located at opposite sides of the drift region. The drift region has a first width, while the isolation structure has a second width, with a ratio of the first width to the second width ranging from 1 to 4. Additionally, the device incorporates a super-junction doped structure in the drift region, consisting of a plurality of first-conductive-type doped sub-regions and second-conductive-type doped sub-regions that are alternately arranged. Notably, the widths of the first-conductive-type doped sub-regions decrease from the gate structure to the drain region, as do the widths of the second-conductive-type doped sub-regions.

Career Highlights

Md Imran Siddiqui is currently employed at Nuvoton Technology Corporation, where he continues to innovate in semiconductor technology. His work has garnered attention for its potential applications in various electronic devices.

Collaborations

One of his notable collaborators is Po-An Chen, with whom he has worked on advancing semiconductor technologies.

Conclusion

Md Imran Siddiqui's contributions to semiconductor technology exemplify the spirit of innovation. His patent reflects a significant advancement in the field, showcasing his expertise and dedication to improving electronic devices.