The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2020
Filed:
Dec. 28, 2018
Nuvoton Technology Corporation, Hsinchu Science Park, TW;
MD Imran Siddiqui, Jharkhand, IN;
Po-An Chen, Toufen, TW;
NUVOTON TECHNOLOGY CORPORATION, Hsinchu Science Park, TW;
Abstract
A semiconductor device is disclosed. The semiconductor device includes a substrate structure, a gate structure, a drift region, a drain region in the substrate structure, two isolation structures at opposite sides of the drift region, wherein the drift region has a first width, the isolation structure has a second width, a ratio of the first width to the second width is in a range from 1 to 4. The semiconductor device further includes a super-junction doped structure in the drift region and including a plurality of first-conductive-type doped sub-regions and a plurality of second-conductive-type doped sub-regions which are alternately disposed. Widths of the plurality of first-conductive-type doped sub-regions decrease from the gate structure to the drain region, and widths of the plurality of second-conductive-type doped sub-regions also decrease from the gate structure to the drain region.