Yokohama, Japan

Mayumi Hirose

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Kabushiki Kaisha Toshiba. Active years: 1989.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Mayumi Hirose. Retrieved from https://idiyas.com/inventor/mayumi-hirose

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 21(Granted Patents)


Company Filing History:


Years Active: 1989

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1 patent (USPTO):Explore Patents

Title: Mayumi Hirose: Innovator in Semiconductor Technology

Introduction

Mayumi Hirose is a prominent inventor based in Yokohama, Japan. She has made significant contributions to the field of semiconductor technology, particularly in the development of field effect transistors. Her innovative work has led to the filing of a patent that showcases her expertise and creativity in this area.

Latest Patents

Mayumi Hirose holds a patent for a Schottky gate field effect transistor and its manufacturing method. In her invention, a gate layer is formed on a semi-insulative substrate. The gate layer is composed of a conductive material that creates a Schottky junction between the substrate and the gate layer. Source and drain regions are established in the substrate with a first conductivity type. Additionally, barrier layers are formed in the substrate with a second conductivity type. These barrier layers surround the source and drain regions, effectively suppressing any current leakage from these regions to the substrate when the field effect transistor is operational. This innovative design enhances the performance and reliability of the device.

Career Highlights

Mayumi Hirose is associated with Kabushiki Kaisha Toshiba, a leading company in the technology sector. Her role at Toshiba has allowed her to work on cutting-edge projects and contribute to advancements in semiconductor technology. With her expertise, she has become a valuable asset to her team and the company.

Collaborations

Throughout her career, Mayumi has collaborated with notable colleagues, including Kenji Ishida and Toshiyuki Terada. These collaborations have fostered a creative environment that encourages innovation and the sharing of ideas.

Conclusion

Mayumi Hirose is a remarkable inventor whose work in semiconductor technology has made a significant impact. Her patent for the Schottky gate field effect transistor exemplifies her innovative spirit and dedication to advancing technology. Her contributions continue to influence the field and inspire future innovations.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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