Maxime G Lemaitre

Title: Maxime G Lemaitre: Innovator in High Power Electronics

Introduction

Maxime G Lemaitre is a notable inventor based in Gainesville, FL. He has made significant contributions to the field of high power electronics through his innovative work on tunable barrier transistors. His research and inventions have the potential to advance technology in various applications.

Latest Patents

Maxime G Lemaitre holds a patent for "Tunable barrier transistors for high power electronics." This patent encompasses various aspects of tunable barrier transistors that can be utilized in high power electronics. One example of his invention includes a tunable barrier transistor that features an inorganic semiconducting layer, a source electrode with a nano-carbon film, a gate dielectric layer, and a gate electrode. The nano-carbon film forms a source-channel interface with the inorganic semiconducting layer, allowing for modulation of the barrier height and width at the interface through a gate field produced by the gate electrode. This innovation represents a significant advancement in the field.

Career Highlights

Maxime G Lemaitre is affiliated with the University of Florida Research Foundation, Incorporated. His work at this institution has allowed him to explore and develop cutting-edge technologies in the realm of electronics. His dedication to research and innovation has positioned him as a key figure in his field.

Collaborations

Maxime has collaborated with notable colleagues, including Xiao Chen and Bo Liu. These partnerships have fostered a collaborative environment that enhances the research and development of new technologies.

Conclusion

Maxime G Lemaitre is a distinguished inventor whose work on tunable barrier transistors is paving the way for advancements in high power electronics. His contributions to the field are invaluable and demonstrate the importance of innovation in technology.