The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2020
Filed:
Apr. 24, 2015
University of Florida Research Foundation, Inc., Gainesville, FL (US);
Maxime G. Lemaitre, Gainesville, FL (US);
Xiao Chen, Gainesville, FL (US);
Bo Liu, Gainesville, FL (US);
Mitchell Austin McCarthy, Gainesville, FL (US);
Andrew Gabriel Rinzler, Newberry, FL (US);
University of Florida Research Foundation, Inc., Gainesville, FL (US);
Abstract
Various aspects of tunable barrier transistors that can be used in high power electronics are provided. In one example, among others, a tunable barrier transistor includes an inorganic semiconducting layer; a source electrode including a nano-carbon film disposed on the inorganic semiconducting layer; a gate dielectric layer disposed on the nano-carbon film; and a gate electrode disposed on the gate dielectric layer over at least a portion of the nano-carbon film. The nano-carbon film can form a source-channel interface with the inorganic semiconducting layer. A gate field produced by the gate electrode can modulate a barrier height at the source-channel interface. The gate field may also modulate a barrier width at the source-channel interface.