Freiberg, Germany

Matthias Daniel


 

Average Co-Inventor Count = 2.9

ph-index = 1


Company Filing History:


Years Active: 2022-2025

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2 patents (USPTO):Explore Patents

Title: Matthias Daniel: Innovator in Silicon Semiconductor Technology

Introduction

Matthias Daniel is a prominent inventor based in Freiberg, Germany. He has made significant contributions to the field of semiconductor technology, particularly in the production of silicon wafers. With a total of 2 patents, his work has advanced the capabilities of silicon materials used in various electronic applications.

Latest Patents

Matthias Daniel's latest patents include a method for producing silicon semiconductor wafers with low concentrations of pinholes. This innovative method involves creating silicon single crystals that have an oxygen concentration greater than 2×1018 at/cm, a pinhole concentration of less than 1.0×1011 cm, and a carbon concentration of less than 5.5×1018 at/cm. Additionally, he has developed a single crystal of silicon with <100> orientation, which is doped with n-type dopant. This crystal features a unique structure that enhances its performance in electronic devices.

Career Highlights

Matthias Daniel is currently employed at Siltronic AG, a leading company in the semiconductor industry. His work at Siltronic AG has positioned him as a key player in the development of advanced silicon materials. His expertise in the Czochralski method and his focus on optimizing crystal growth processes have been instrumental in achieving high-quality silicon wafers.

Collaborations

Matthias has collaborated with notable colleagues such as Georg Raming and Ludwig Stockmeier. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas within the semiconductor field.

Conclusion

Matthias Daniel's contributions to silicon semiconductor technology exemplify his dedication to innovation and excellence. His patents and work at Siltronic AG continue to influence the industry, paving the way for future advancements in semiconductor materials.

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