Siltronic Ag

Matthias Daniel

Georg Raming

Alfred Miller

Sergiy Balanetskyy

Ludwig Stockmeier

Johann-Andreas Huber

Jochen Friedrich

Silicon single crystals having an oxygen concentration of greater than 2×10at/cm, a concentration of pinholes having a diameter of greater than 100 μm of less than 1.0×10l/cm, a carbon concentration of less than 5.5×10at/cm, an iron concentration of less than 5.0×10at/cm, a COP concentration of fewer than 1000 defects/cm, a LPIT concentration of fewer than 1 defect/cmand a crystal diameter of greater than 200 mm, are produced by the Czochralski method employing a purge gas at specified pressures and flow rates.

Method for producing silicon semiconductor wafers having low concentrations of pinholes

Single crystal silicon with &#x3c;100&#x3e; orientation is doped with n-type dopant and comprises a starting cone, a cylindrical portion and an end cone, a crystal angle being not less than 20&#xb0; and not greater than 30&#xb0; in a middle portion of the starting cone, the length of which is not less than 50% of a length of the starting cone, and edge facets extending from a periphery of the single crystal into the single crystal, the edge facets in the starting cone and in the cylindrical portion of the single crystal in each case having a length which is not more than 700 &#x3bc;m.

Single crystal of silicon with &#x3c;100&#x3e; orientation, which is doped with n-type dopant, and method for producing such a single crystal

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Freiberg, Germany

Matthias Daniel