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For the Inventor, By the Inventor

Trezzo sull'Adda, Italy

Matteo Patelmo

USPTO Granted Patents = 25 


Average Co-Inventor Count = 3.1

ph-index = 6

Forward Citations = 146(Granted Patents)


Location History:

  • Bernareggio, IT (2001 - 2003)
  • Trezzo S/Adda, IT (2004)
  • Trezzo sull'Adda, IT (2001 - 2006)

Company Filing History:

goldMedal25 out of 5,559 
 
Stmicroelectronics S.r.l.
 patents

Years Active: 2001-2006

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25 patents (USPTO):Explore Patents
1. 7072239 - Method and circuit for locating anomalous memory cells (2006-07-04),
2. 6677206 - Non-volatile high-performance memory device and relative manufacturing process (2004-01-13),
3. 6624015 - Method for manufacturing electronic devices having non-volatile memory cells and LV transistors with salicided junctions (2003-09-23),
4. 6614080 - Mask programmed ROM inviolable by reverse engineering inspections and method of fabrication (2003-09-02),
5. 6576517 - Method for obtaining a multi-level ROM in an EEPROM process flow (2003-06-10),
6. 6573130 - Process for manufacturing electronic devices having non-salicidated non-volatile memory cells, non-salicidated HV transistors, and salicidated-junction LV transistors (2003-06-03),
7. 6551892 - Process for the manufacture of integrated devices with gate oxide protection from manufacturing process damage, and protection structure therefor (2003-04-22),
8. 6528885 - Anti-deciphering contacts (2003-03-04),
9. 6521957 - Method for forming a multilevel ROM memory in a dual gate CMOS process, and corresponding ROM memory cell (2003-02-18),
10. 6501147 - Process for manufacturing electronic devices comprising high voltage MOS transistors, and electronic device thus obtained (2002-12-31),
11. 6444526 - Simplified process for defining the tunnel area in non-aligned, non-volatile semiconductor memory cells (2002-09-03),
12. 6420769 - Method for manufacturing electronic devices having HV transistors and LV transistors with salicided junctions (2002-07-16),
13. 6414349 - High efficiency memory device (2002-07-02),
14. 6396101 - Method for manufacturing electronic devices comprising non-volatile memory cells and LV transistors with salicided junctions (2002-05-28),
15. 6351008 - Method for manufacturing electronic devices having non-volatile memory cells and LV transistors with salicided junctions (2002-02-26),

Title: Matteo Patelmo: Innovator in Memory Cell Technology

Introduction

Matteo Patelmo is an accomplished inventor based in Trezzo sull'Adda, Italy, with an impressive portfolio of 25 patents. His work primarily focuses on advancements in memory technology, highlighting his contributions to the field and underlining his innovative approach to solving complex engineering challenges.

Latest Patents

Among Matteo's latest patents are two significant innovations in the realm of memory cell technology. The first, titled "Method and circuit for locating anomalous memory cells," details a comprehensive approach for identifying memory cells within an array that exhibit a stand-by current exceeding a specified threshold based on their programming state. The method emphasizes the importance of dividing the array into subsets for repeated testing until the cells with excessive current are pinpointed.

His second noteworthy patent, "Non-volatile high-performance memory device and relative manufacturing process," describes a novel non-volatile memory device composed of multiple memory cells, each configured as a MOS transistor. This invention delineates the particular architecture of memory cells, focusing on those defined in both ON and OFF states, and incorporates high dopant regions alongside silicide layers for improved performance.

Career Highlights

Matteo Patelmo currently works at STMicroelectronics S.r.l., a leading company in the field of semiconductor technology. His tenure at STMicroelectronics has empowered him to translate theoretical concepts into practical applications, contributing significantly to the advancement of memory devices.

Collaborations

While progressing in his career, Matteo has worked alongside esteemed colleagues, including Bruno Vajana and Giovanna Dalla Libera. Their collaborations have fostered an environment of innovation that continues to propel developments in memory technology.

Conclusion

Matteo Patelmo exemplifies the spirit of innovation that drives the technology sector forward. His patented methodologies and designs not only enhance the efficiency of memory devices but also set a benchmark for future developments in the field. As he continues to pave the way for advancements, his contributions will undoubtedly leave a lasting imprint on the industry.

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