The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2003
Filed:
Oct. 26, 2001
Bruno Vajana, Bergamo, IT;
Matteo Patelmo, Trezzo Sull'Adda, IT;
STMicroelectronics S.r.l., Agrate Brianza, IT;
Abstract
A read only memory (ROM) device includes a semiconductor substrate having a first type of conductivity, and a plurality of memory cells on the semiconductor substrate. Each memory cell includes first and second regions of a second conductivity type opposite the first conductivity type. A first dielectric layer is on the plurality of memory cells, and a plurality of first contacts extend through the first dielectric layer for contacting the first regions. A second dielectric layer is on the first dielectric layer and the plurality of first contacts. A plurality of second contacts extend through the second dielectric layer and overlie the corresponding second regions. The plurality of second contacts define interconnection contacts by further extending through the first dielectric layer for contacting the second regions for memory cells programmed in a conductive state, and false interconnection contacts by not extending through the first dielectric layer for contacting the second regions for memory cells programmed in a non-conductive state.