Dortmund, Germany

Mats Schmalhorst

This inventor holds 1 USPTO granted patent and 4 EPO patents. Top assignees: Elmos Semiconductor Se, Hyundai Mobis Corporation. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Mats Schmalhorst. Retrieved from https://idiyas.com/inventor/mats-schmalhorst-e8sgyxpx

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Mats Schmalhorst: Semiconductor Invention and Patent

Introduction

Mats Schmalhorst is an inventor associated with Dortmund, Germany. His patent work includes a device and method designed to inhibit substrate current in an integrated-circuit semiconductor substrate.

Latest Patents

Schmalhorst is credited with 1 patent: “Device and Method for Inhibiting a Substrate Current in an IC Semiconductor Substrate.” The invention describes devices and methods for preventing substrate current from being injected into the substrate of a CMOS circuit. The system detects the potential at a circuit contact and compares it with a reference value. When the detected potential is at or below that value, the contact is connected to a leakage-circuit node, diverting current so it does not flow to ground through a parasitic lateral bipolar structure. The leakage node may connect to the reference-potential line or to another line with a higher potential.

Career Highlights

Schmalhorst has been associated with Elmos Semiconductor SE and Hyundai Mobis Corporation. His patent addresses current management in CMOS circuits, a technical challenge relevant to semiconductor device design.

Collaborations

His listed coworkers include Andre Sudhaus and Uwe Friemann.

Conclusion

Mats Schmalhorst’s patent describes a circuit approach for detecting and redirecting substrate current, reflecting his contribution to semiconductor technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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