The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2026
Filed:
Mar. 18, 2021
Elmos Semiconductor SE, Dortmund, DE;
Hyundai Mobis Co., Ltd., Seoul, KR;
Fikret Abaza, Dortmund, DE;
Andre Sudhaus, Dortmund, DE;
Uwe Friemann, Dortmund, DE;
Andreas Friesen, Dortmund, DE;
Mats Schmalhorst, Dortmund, DE;
Marco Liedtke, Dortmund, DE;
Elmos Semiconductor SE, Leverkusen, DE;
Hyundai Mobis Co., Ltd., Seoul, KR;
Abstract
Devices and methods prevent injection of a substrate current into the substrate Sub of a CMOS circuit. The devices detect the potential of a contact of the integrated CMOS circuit, compare the value of the potential detected with a reference value and connect the contact to a leakage circuit node for discharging the current such that same does not flow to ground via the parasitic bipolar lateral structure. The leakage circuit node can be connected to the reference potential line or to another line that has a higher potential than the reference potential line. This electrical connection is activated when the value of the potential of the contact is lower than or equal to a reference value.