Massimo A Ghioni

Title: Massimo A. Ghioni: Innovator in Photodetector Technology

Introduction

Massimo A. Ghioni is a notable inventor based in Peekskill, NY (US). He has made significant contributions to the field of photodetector technology, particularly through his innovative patent that enhances the performance of silicon-based devices.

Latest Patents

Massimo A. Ghioni holds a patent for "High speed silicon-based lateral junction photodetectors having recessed." This invention involves the development of metal-semiconductor-metal photodetectors (MSM-PD) and lateral p-i-n photodetectors (LPIN-PD). The design features interdigitated metallic electrodes on a silicon surface, which are strategically recessed to improve performance. The electrodes are fabricated to create Schottky barriers, utilizing self-aligned metallization techniques. This process ensures compatibility with conventional silicon integrated circuit technology, enhancing sensitivity and minimizing carrier transit time.

Career Highlights

Massimo A. Ghioni is associated with the International Business Machines Corporation (IBM), where he has contributed to advancements in semiconductor technology. His work focuses on integrating innovative designs that push the boundaries of existing photodetector capabilities.

Collaborations

Throughout his career, Massimo has collaborated with esteemed colleagues such as Ernest Bassous and Jean-Marc Halbout. These partnerships have fostered a collaborative environment that encourages the exchange of ideas and technological advancements.

Conclusion

Massimo A. Ghioni's contributions to photodetector technology exemplify the spirit of innovation in the field of electronics. His patented designs not only enhance device performance but also pave the way for future advancements in silicon-based technologies.