This inventor holds 3 USPTO granted patents and 3 published patent applications. Top assignee: Sharp Kabushiki Kaisha Corporation. Active years: 2001-2019.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Location History:
- Tenri, JP (2001 - 2004)
- Sakai, JP (2019)
Company Filing History:
Years Active: 2001-2019
Title: Masayuki Fukumi: Innovator in Semiconductor Technology
Introduction
Masayuki Fukumi is a prominent inventor based in Sakai, Japan, known for his contributions to semiconductor technology. With a total of three patents to his name, Fukumi has made significant advancements in the field, particularly in nitride semiconductor devices.
Latest Patents
Fukumi's latest patents include a nitride semiconductor device that features a second insulating film covering at least a drain electrode. This innovative device incorporates a thermal stress reducer designed to minimize thermal stress at critical points during load shorts. Another notable patent is for a semiconductor substrate device, which consists of a first semiconductor substrate with a concave-convex surface and a second semiconductor substrate that has an insulating film. These two substrates are combined to create a cavity within the semiconductor substrate device, showcasing Fukumi's ingenuity in semiconductor fabrication.
Career Highlights
Fukumi is currently employed at Sharp Kabushiki Kaisha Corporation, where he continues to push the boundaries of semiconductor technology. His work has been instrumental in developing devices that enhance performance and reliability in various applications.
Collaborations
Fukumi has collaborated with notable colleagues, including Yasumori Fukushima and Hisao Ichijoh, contributing to a dynamic research environment that fosters innovation and creativity.
Conclusion
Masayuki Fukumi's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence advancements in semiconductor devices, paving the way for future innovations.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
