The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2019
Filed:
Mar. 30, 2016
Applicant:
Sharp Kabushiki Kaisha, Sakai, Osaka, JP;
Inventors:
Hisao Ichijoh, Kanazawa, JP;
Masaru Kubo, Sakai, JP;
Masayuki Fukumi, Sakai, JP;
Norihisa Fujii, Fukuyama, JP;
Assignee:
SHARP KABUSHIKI KAISHA, Sakai, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/778 (2006.01); H01L 29/41 (2006.01); H01L 29/78 (2006.01); H01L 29/812 (2006.01); H01L 29/06 (2006.01); H01L 29/40 (2006.01); H01L 29/417 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66462 (2013.01); H01L 21/823456 (2013.01); H01L 27/088 (2013.01); H01L 29/06 (2013.01); H01L 29/402 (2013.01); H01L 29/41 (2013.01); H01L 29/41758 (2013.01); H01L 29/66431 (2013.01); H01L 29/778 (2013.01); H01L 29/7786 (2013.01); H01L 29/7787 (2013.01); H01L 29/7789 (2013.01); H01L 29/78 (2013.01); H01L 29/812 (2013.01); H01L 23/562 (2013.01);
Abstract
A nitride semiconductor device includes a second insulating film () covering at least a drain electrode () and a thermal stress reducer that reduces thermal stress in a place where thermal stress that is generated between the drain electrode () and the second insulating film () reaches its maximum at the time of a load short. The thermal stress reducer () is a drain field plate portion () formed by an extension of an upper part of the drain electrode () toward a source electrode ().