Tokyo, Japan

Masayoshi Obara

This inventor holds 1 USPTO granted patent. Top assignee: Shin-Etsu Handotai Co., Ltd.. Active years: 2010.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Masayoshi Obara. Retrieved from https://idiyas.com/inventor/masayoshi-obara

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 2.0

ph-index = 1


Company Filing History:


Years Active: 2010

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1 patent (USPTO):Explore Patents

Title: Masayoshi Obara: Innovator in Light Emitting Devices

Introduction

Masayoshi Obara is a prominent inventor based in Tokyo, Japan. He is known for his contributions to the field of light emitting devices. His innovative work has led to the development of a patented technology that enhances the reliability of bonding in semiconductor applications.

Latest Patents

Masayoshi Obara holds a patent for a "Light emitting device and method of fabricating light emitting device." This invention focuses on improving the contact resistance between the second electrode and the compound semiconductor layer. The design includes an alloyed contact layer and a solder layer that ensures a strong bond, reducing the risk of delamination. This technology is crucial for enhancing the performance and longevity of light emitting devices.

Career Highlights

Obara is associated with Shin-Etsu Handotai Co., Ltd., a leading company in the semiconductor industry. His work at the company has significantly contributed to advancements in light emitting technology. With a focus on innovation, he continues to push the boundaries of what is possible in this field.

Collaborations

Masayoshi Obara has collaborated with Hitoshi Ikeda, another expert in the field. Their partnership has fostered a creative environment that encourages the development of cutting-edge technologies.

Conclusion

Masayoshi Obara's contributions to light emitting devices exemplify the spirit of innovation in the semiconductor industry. His patented technology not only enhances device performance but also sets a standard for future developments.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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