Osaka, Japan

Masayoshi Natsume

USPTO Granted Patents = 5 

 

Average Co-Inventor Count = 4.8

ph-index = 3

Forward Citations = 54(Granted Patents)


Location History:

  • Ibaraki, JP (2003 - 2004)
  • Osaka, JP (2007 - 2015)

Company Filing History:


Years Active: 2003-2015

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5 patents (USPTO):Explore Patents

Title: Masayoshi Natsume - Innovator in Semiconductor Processing

Introduction

Masayoshi Natsume is an inventor based in Ibaraki-shi, Japan. He has made significant contributions to the field of semiconductor processing. His innovative approach focuses on minimizing contamination during the manufacturing of semiconductor devices.

Latest Patent Applications

Natsume's notable patent application is for a semiconductor processing sheet. This sheet contains a base layer with a plastic sheet that includes pigment as a core layer. A non-pigment-containing layer is arranged on the outermost surfaces of the core layer. This design aims to reduce contamination of the inner surface of the film manufacturing die caused by the pigment. By maintaining visibility while minimizing pigment contamination, the application seeks to enhance the precision of sheet thickness during production.

Conclusion

Masayoshi Natsume's work in semiconductor processing highlights the importance of innovation in reducing contamination and improving manufacturing processes. His contributions are essential for advancing technology in this field.

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