This inventor holds 2 USPTO granted patents. Top assignee: Hitachi Cable, Inc.. Active years: 2005-2007.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Location History:
- Ibaraki-ken, JP (2005)
- Tokyo, JP (2007)
Company Filing History:
Years Active: 2005-2007
Title: Masaya Ohnishi: Innovator in Compound Semiconductor Technology
Introduction
Masaya Ohnishi is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of compound semiconductors. With a total of 2 patents to his name, Ohnishi continues to push the boundaries of innovation in this critical area of research.
Latest Patents
Ohnishi's latest patents include a method for producing a p-type GaAs single crystal and a method for growing a compound semiconductor single crystal. The first patent describes a p-type GaAs single crystal that contains Si, Zn, B, and In as dopants, achieving an average dislocation density of 100 cm or less. This crystal can be produced by cooling a GaAs melt in a crystal-growing container with a seed crystal placed at the lower end, allowing for upward growth from the seed crystal. The second patent outlines a method for growing a compound semiconductor single crystal by cooling a starting material melt with an upward increasing temperature gradient, which also involves a seed crystal placed at the lower end. The orientation of the seed crystal is specified to have an offset orientation of <100>+θ, where the offset angle θ ranges from 2° to 55°.
Career Highlights
Masaya Ohnishi is currently employed at Hitachi Cable, Inc., where he applies his expertise in semiconductor technology. His work has been instrumental in advancing the production methods for high-quality semiconductor materials. Ohnishi's innovative approaches have garnered attention in the industry, contributing to the ongoing evolution of semiconductor applications.
Collaborations
Ohnishi has collaborated with notable colleagues, including Kenya Itani and Seiji Mizuniwa. These partnerships have fostered a collaborative environment that enhances the research and development of semiconductor technologies.
Conclusion
Masaya Ohnishi stands out as a key figure in the field of compound semiconductors, with his innovative patents and contributions to Hitachi Cable, Inc. His work continues to influence the semiconductor industry, paving the way for future advancements.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
