The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2005
Filed:
Apr. 02, 2002
Masaya Ohnishi, Ibaraki-ken, JP;
Kenya Itani, Ibaraki-ken, JP;
Seiji Mizuniwa, Ibaraki-ken, JP;
Hiroshi Sasabe, Ibaraki-ken, JP;
Inao Fujisaki, Ibaraki-ken, JP;
Masaya Ohnishi, Ibaraki-ken, JP;
Kenya Itani, Ibaraki-ken, JP;
Seiji Mizuniwa, Ibaraki-ken, JP;
Hiroshi Sasabe, Ibaraki-ken, JP;
Inao Fujisaki, Ibaraki-ken, JP;
Hitachi Cable, Ltd., Tokyo, JP;
Abstract
A method for growing a compound semiconductor single crystal comprising cooling a starting material melt of a compound semiconductor with an upward increasing temperature gradient in a crystal-growing container having a seed crystal placed at a lower end, thereby growing a single crystal upward from the seed crystal, the crystal orientation of the seed crystal in a crystal growth axis direction being an offset orientation of <100>+θ, wherein the offset angle θ is 2°≦θ≦55°.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile