Location History:
- Tenri, JP (1992)
- Nara, JP (2009)
- Sakai, JP (2018 - 2019)
Company Filing History:
Years Active: 1992-2019
Title: Innovations of Masaya Isobe
Introduction
Masaya Isobe is a notable inventor based in Sakai, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of four patents. His work focuses on enhancing the efficiency and functionality of semiconductor devices.
Latest Patents
One of his latest patents is a multiple-unit semiconductor device. This device includes a normally-ON type first FET and a normally-OFF type second FET that are connected in series between a first terminal and a second terminal. Additionally, it features a protection circuit that includes a switching element for discharge connected to the second FET in parallel, along with a trigger circuit that activates the switching element when a surge is applied. Another significant patent is for a field-effect transistor, specifically a GaN-based HFET. This transistor includes a gate electrode, a gate electrode pad, and wiring lines that connect these components, along with a resistance element that adjusts the impedance of the first wiring line.
Career Highlights
Masaya Isobe is currently employed at Sharp Kabushiki Kaisha Corporation, where he continues to innovate in the semiconductor field. His work has been instrumental in advancing technology that impacts various electronic applications.
Collaborations
Throughout his career, Isobe has collaborated with notable colleagues, including Albert O Adan and Takamitsu Suzuki. These partnerships have contributed to the development of cutting-edge technologies in the semiconductor industry.
Conclusion
Masaya Isobe's contributions to semiconductor technology through his patents and collaborations highlight his role as a significant inventor in the field. His innovative work continues to influence advancements in electronic devices.