The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2018
Filed:
Feb. 20, 2015
Applicant:
Sharp Kabushiki Kaisha, Sakai, Osaka, JP;
Inventors:
Assignee:
SHARP KABUSHIKI KAISHA, Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 29/778 (2006.01); H01L 29/78 (2006.01); H01L 29/786 (2006.01); H01L 23/528 (2006.01); H01L 23/64 (2006.01); H01L 29/205 (2006.01); H01L 29/417 (2006.01); H01L 29/20 (2006.01); H01L 29/40 (2006.01); H01L 29/45 (2006.01);
U.S. Cl.
CPC ...
H01L 29/778 (2013.01); H01L 23/528 (2013.01); H01L 23/64 (2013.01); H01L 29/205 (2013.01); H01L 29/41758 (2013.01); H01L 29/4238 (2013.01); H01L 29/7786 (2013.01); H01L 29/78 (2013.01); H01L 29/786 (2013.01); H01L 29/2003 (2013.01); H01L 29/402 (2013.01); H01L 29/42376 (2013.01); H01L 29/452 (2013.01);
Abstract
A field-effect transistor (a GaN-based HFET) includes a gate electrode, a gate electrode pad, a first wiring line connecting one end of the gate electrode and the gate electrode pad, a second wiring line connecting the other end of the gate electrode and the gate electrode pad, and a resistance element that is connected to the first wiring line and is capable of adjusting the impedance of the first wiring line.