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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10256224 B1

PDFFull Text
Date of Patent:
Apr. 09, 2019

Filed:

Feb. 12, 2015

Multiple-unit semiconductor device

Applicant:

Sharp Kabushiki Kaisha, Sakai, Osaka, JP;

Inventor:

Masaya Isobe, Sakai, JP;

Assignee:

SHARP KABUSHIKI KAISHA, Sakai, Osaka, JP;

Attorney:

Birch, Stewart, Kolasch & Birch, LLP

Primary Examiner:

Scott Bauer

Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 21/822 (2006.01); H01L 27/04 (2006.01); H03K 17/687 (2006.01); H01L 23/495 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01); H01L 29/778 (2006.01); H01L 29/78 (2006.01); H03K 17/06 (2006.01); H03K 17/16 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0248 (2013.01); H01L 21/822 (2013.01); H01L 23/4952 (2013.01); H01L 23/49562 (2013.01); H01L 23/49568 (2013.01); H01L 23/49575 (2013.01); H01L 27/04 (2013.01); H01L 29/16 (2013.01); H01L 29/2003 (2013.01); H01L 29/7787 (2013.01); H01L 29/78 (2013.01); H03K 17/063 (2013.01); H03K 17/165 (2013.01); H03K 17/687 (2013.01); H01L 2224/0603 (2013.01); H01L 2224/48137 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/4903 (2013.01); H01L 2224/49113 (2013.01);
Abstract

A multiple-unit semiconductor device () includes a normally-ON type first FET () and a normally-OFF type second FET () that are connected to each other in series between a first terminal and a second terminal (and). The multiple-unit semiconductor device () further includes a protection circuit that includes a switching element for discharge () connected to the second FET in parallel and a trigger circuit that is disposed between the first terminal and the second terminal (and) and causes the switching element for discharge to turn to an ON state when a surge is applied to the first terminal.

Find Patent Forward Citations

Isobe, Masaya. (2019). Multiple-unit semiconductor device (U.S. Patent No. 10256224). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10256224

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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