Kanagawa, Japan

Masatoshi Yoshida

This inventor holds 3 USPTO granted patents and 1 EPO patent. Top assignees: Fjuitsu Limited, Fujitsu Corporation, Nec Electronics Corporation. Active years: 2006-2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Masatoshi Yoshida. Retrieved from https://idiyas.com/inventor/masatoshi-yoshida-spuyogsw

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 66.7

 

Average Co-Inventor Count = 1.8

ph-index = 2

Forward Citations = 113(Granted Patents)


Location History:

  • Kawasaki, JP (2006)
  • Kanagawa, JP (2009)
  • Taiwa, JP (2015)

Company Filing History:


Years Active: 2006-2015

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3 patents (USPTO):Explore Patents

Title: Masatoshi Yoshida: Innovator in Semiconductor Technology

Introduction

Masatoshi Yoshida is a prominent inventor based in Kanagawa, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on enhancing the functionality and efficiency of electronic devices.

Latest Patents

Yoshida's latest patents include a resistance adjusting circuit and a resistance adjusting method. This innovative circuit comprises a reference resistor, a first power source that outputs a first voltage, and a first current source that generates a first current based on a reference current. Additionally, it features a first variable resistor and a second current source that outputs a second current, which is derived from the first current. The circuit is designed to ensure that the voltage at the second terminal of the reference resistor matches the voltage at the connection point of the first variable resistor and the second current source.

Another notable patent is for a semiconductor device that controls the threshold voltage of transistors through applied substrate bias. This device is compact and includes a clock signal line, shield wiring to protect the clock signal line from interference, and a substrate bias generating circuit. The threshold voltage of the transistor is influenced by the substrate bias applied to it, showcasing Yoshida's innovative approach to semiconductor design.

Career Highlights

Throughout his career, Masatoshi Yoshida has worked with leading companies in the technology sector, including NEC Electronics Corporation and Fujitsu Corporation. His experience in these organizations has allowed him to develop cutting-edge technologies that have advanced the field of electronics.

Collaborations

Yoshida has collaborated with notable colleagues such as Jun Kamada and Seigo Kotani. These partnerships have contributed to the successful development of his innovative projects and patents.

Conclusion

Masatoshi Yoshida is a distinguished inventor whose work in semiconductor technology has led to significant advancements in the industry. His patents reflect his commitment to innovation and excellence in electronic design.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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