The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2009
Filed:
Oct. 03, 2006
Applicant:
Masatoshi Yoshida, Kanagawa, JP;
Inventor:
Masatoshi Yoshida, Kanagawa, JP;
Assignee:
NEC Electronics Corporation, Kanagawa, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 39/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device in which the threshold voltage of transistors is controlled through the applied substrate bias and having relatively small size. The semiconductor device includes: a clock signal line; a shield wiring for shielding the clock signal line from another interconnection; and a substrate bias generating circuit. The substrate bias is applied through the shield wiring to a region on which a transistor is formed. The threshold voltage of the transistor depends to the substrate bias applied to the transistor.