Masatoshi Tsuneoka

Title: Masatoshi Tsuneoka: Innovator in Semiconductor Technology

Introduction

Masatoshi Tsuneoka is a prominent inventor based in Ohme, Japan, known for his significant contributions to semiconductor technology. With a total of 14 patents to his name, Tsuneoka has made remarkable advancements in the field of integrated circuit devices.

Latest Patents

His latest patents include a semiconductor integrated circuit device and a process for fabricating the same. This innovative process involves forming MISFETs over the principal surface in active regions of a substrate, surrounded by inactive regions formed of an element separating insulating film and channel stopper regions. The process includes several steps, such as forming a first mask using a non-oxidizable mask and an etching mask, creating a second mask in self-alignment with the first, etching the inactive regions, and forming the element separating insulating film through oxidation. Additionally, the process introduces impurities into the surface portions of the substrate after the masks have been removed, ensuring the formation of channel stopper regions.

Career Highlights

Throughout his career, Tsuneoka has worked with notable companies, including Hitachi, Ltd. and Hitachi VLSI Engineering Corporation. His experience in these organizations has allowed him to refine his skills and contribute to groundbreaking technologies in the semiconductor industry.

Collaborations

Some of his notable coworkers include Mitsuaki Horiuchi and Nobuo Owada, who have collaborated with him on various projects, further enhancing the innovation landscape in semiconductor technology.

Conclusion

Masatoshi Tsuneoka's work in semiconductor technology has significantly impacted the industry, showcasing his expertise and dedication to innovation. His patents reflect a deep understanding of integrated circuit fabrication processes, making him a key figure in the field.