The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 26, 1991

Filed:

Aug. 22, 1989
Applicant:
Inventors:

Nobuo Owada, Ohme, JP;

Mitsuaki Horiuchi, Fuchu, JP;

Masatoshi Tsuneoka, Ohme, JP;

Tadayuki Taneoka, Akishima, JP;

Assignee:

Hitachi, Ltd., Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 71 ; 357 67 ; 357 34 ; 357 59 ; 357 56 ;
Abstract

On a semiconductor film to function as a lead-out electrode of a semiconductor element, a metal silicide film and a metal nitride film are successively provided, whereby alloying and inferior contact resistances attributed to heat during wiring with aluminum can be effectively suppressed, so that the reliability of a semiconductor device can be enhanced.


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