This inventor holds 3 USPTO granted patents. Top assignee: Hitachi, Ltd.. Active years: 1979-1986.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Location History:
- Fuchu, JP (1979)
- Takasaki, JP (1980 - 1986)
Company Filing History:
Years Active: 1979-1986
Title: Masatomo Furumi: Innovator in Semiconductor Technology
Introduction
Masatomo Furumi is a distinguished inventor based in Takasaki, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on enhancing the performance and efficiency of semiconductor devices.
Latest Patents
Furumi's latest patents include an insulated gate type field effect semiconductor device and a circuit. This invention features an insulated gate type field effect transistor designed for high power applications. It incorporates a low conductivity region surrounding a drain region and an offset gate region with an even lower conductivity. The design of the length and impurity concentration is tailored to optimize the electric characteristics of the transistor. Additionally, he has developed a combination of P channel and N channel type transistors that exhibit substantially the same electric characteristics, along with an audio amplifying circuit utilizing this combination.
Another notable patent is an insulated-gate semiconductor device. This device includes a first region formed on the surface of a semiconductor substrate, which has a conductivity type opposite to that of the substrate. Within this first region, two insulated-gate FETs are created, with their drains made common and electrically connected to the first region. The configuration prevents the occurrence of negative resistance, showcasing Furumi's innovative approach to semiconductor design.
Career Highlights
Masatomo Furumi is currently employed at Hitachi, Ltd., where he continues to push the boundaries of semiconductor technology. His work has been instrumental in advancing the capabilities of insulated gate transistors and semiconductor devices.
Collaborations
Furumi has collaborated with notable colleagues, including Isao Yoshida and Shikayuki Ochi. Their combined expertise has contributed to the successful development of innovative semiconductor technologies.
Conclusion
Masatomo Furumi's contributions to the field of semiconductor technology are noteworthy. His patents reflect a deep understanding of electrical characteristics and innovative design, making him a significant figure in the industry. His ongoing work at Hitachi, Ltd. continues to influence the future of semiconductor devices.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
