The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 1986
Filed:
Mar. 01, 1978
Isao Yoshida, Tokyo, JP;
Takeaki Okabe, Kokubunji, JP;
Shikayuki Ochi, Akishima, JP;
Hidefumi Ito, Takasaki, JP;
Masatomo Furumi, Takasaki, JP;
Masaru Takeuchi, Tokyo, JP;
Minoru Nagata, Kodaira, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
An insulated gate type field effect transistor for high power which has a low conductivity region surrounding a drain region and an offset gate region having a further lower conductivity adjoined thereto, wherein the length and impurity concentration are designed according to the electric characteristics of the transistor. A combination of P channel and N channel type transistors having substantially the same electric characteristics and an audio amplifying circuit using the combination are also disclosed.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile