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For the Inventor, By the Inventor

Amagasaki, Japan

Masato Shiobara

This inventor holds 2 USPTO granted patents. Top assignee: Sumitomo Metal (Smi) Electronics Devices, Inc.. Active years: 2002-2004.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Masato Shiobara. Retrieved from https://idiyas.com/inventor/masato-shiobara

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 2

% Patents Active = 50.0

Average Co-Inventor Count = 2.4

ph-index = 1

Forward Citations = 8(Granted Patents)


Location History:

  • Hyogo, JP (2002)
  • Amagasaki, JP (2004)

Company Filing History:

goldMedal2 out of 24 
 
Sumitomo Metal (Smi) Electronics Devices, Inc.
 patents

Years Active: 2002-2004

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2 patents (USPTO):Explore Patents
1. 6781488 - Connected construction of a high-frequency package and a wiring board (2004-08-24),
2. 6489679 - High-frequency package (2002-12-03),

Title: Masato Shiobara: Innovator in High-Frequency Technology

Introduction

Masato Shiobara is a prominent inventor based in Amagasaki, Japan. He has made significant contributions to the field of high-frequency technology, holding 2 patents that showcase his innovative approach to engineering.

Latest Patents

His latest patents include a connected construction of a high-frequency package and a wiring board. This invention boasts excellent high-frequency transmission characteristics without degradation, even for high-frequency signals in a wide band ranging from 20 GHz to 80 GHz. The design considers the dielectric constants of both the high-frequency transmission line substrate and the wiring board, enhancing the transmission characteristics between them. Additionally, his high-frequency package is designed for a frequency range up to 90 GHz, featuring a sealed construction that is cost-effective and strong.

Career Highlights

Masato Shiobara is currently employed at Sumitomo Metal Electronics Devices, Inc., where he continues to push the boundaries of high-frequency technology. His work has been instrumental in developing solutions that meet the demands of modern electronic applications.

Collaborations

He has collaborated with notable coworkers such as Yoshio Tsukiyama and Yoshihisa Araya, contributing to a dynamic team focused on innovation in electronics.

Conclusion

Masato Shiobara's contributions to high-frequency technology reflect his dedication to innovation and excellence in engineering. His patents not only advance the field but also pave the way for future developments in electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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