Nagoya, Japan

Masato Ohmori

This inventor holds 1 USPTO granted patent. Top assignees: Toyota Jidosha Kabushiki Kaisha, Toyota School Foundation. Active years: 2017.


Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2017

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1 patent (USPTO):Explore Patents

Title: Masato Ohmori: Innovator in Semiconductor Technology

Introduction

Masato Ohmori is a notable inventor based in Nagoya, Japan. He has made significant contributions to the field of semiconductor technology, particularly with his innovative designs that enhance energy storage capabilities.

Latest Patents

Ohmori holds a patent for a semiconductor apparatus that features a layered structure. This structure includes double junctions with a first junction where a wide-bandgap layer and a narrow-bandgap layer are layered on each other, and a second junction where a narrow-bandgap layer and a wide-bandgap layer are layered on each other. The apparatus is designed to function as an electric energy storage device, such as a capacitor. Each double junction structure consists of regions with fixed charges, which are crucial for the formation of a two-dimensional electron gas (2DEG) or a two-dimensional hole gas (2DHG) at each junction.

Career Highlights

Throughout his career, Masato Ohmori has worked with prominent companies, including Toyota Motor Corporation and the Toyota School Foundation. His experience in these organizations has allowed him to apply his innovative ideas in practical settings, contributing to advancements in automotive and educational technologies.

Collaborations

Ohmori has collaborated with esteemed colleagues such as Tomoyoshi Kushida and Hiroyuki Sakaki. These partnerships have fostered a creative environment that has led to the development of groundbreaking technologies in the semiconductor field.

Conclusion

Masato Ohmori's contributions to semiconductor technology exemplify the impact of innovation in energy storage solutions. His work continues to influence the industry and inspire future advancements.

Profile summary based on public USPTO records.
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