The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 2017
Filed:
Mar. 14, 2013
Tomoyoshi Kushida, Nisshin, JP;
Hiroyuki Sakaki, Nagoya, JP;
Masato Ohmori, Nagoya, JP;
TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota-Shi, JP;
TOYOTA SCHOOL FOUNDATION, Nagoya-Shi, JP;
Abstract
A semiconductor apparatus () includes: a layered structure () that includes double junction structures that have a first junction () where a wide-bandgap layer () and a narrow-bandgap layer () are layered on each other and a second junction () where a narrow-bandgap layer () and a wide-bandgap layer () are layered on each other, and electrode semiconductor layers () are joined to each layer of the layered structure. Each double junction structure includes a pair of a first region () that has negative fixed charge and a second region () that has positive fixed charge. The first region is closer to the first junction than to a center of the wide-bandgap layer. The second region is closer to the second junction than to the center of the wide-bandgap layer. A 2DEG or a 2DHG is formed at each junction. The semiconductor apparatus functions as an electric energy storage device such as a capacitor.