Vancouver, WA, United States of America

Masato Kobayashi


Average Co-Inventor Count = 3.5

ph-index = 5

Forward Citations = 416(Granted Patents)


Location History:

  • Teri, JP (1999)
  • Vancouver, WA (US) (1998 - 2000)

Company Filing History:


Years Active: 1998-2000

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6 patents (USPTO):Explore Patents

Title: Innovations of Masato Kobayashi in Semiconductor Technology

Introduction

Masato Kobayashi is a notable inventor based in Vancouver, WA, who has made significant contributions to the field of semiconductor technology. With a total of six patents to his name, his work primarily focuses on methods for applying chemical vapor deposition (CVD) copper to integrated circuit substrates.

Latest Patents

Kobayashi's latest patents include a precursor with (methoxy) (methyl) silylolefin ligand to deposit copper. This innovative method enhances the bond between the ligand and the (hfac)Cu complex, ensuring consistent temperatures during copper deposition. Additionally, he has developed a method for removing CVD copper from semiconductor wafers using diluted nitric acid and an edge bead removal tool. This technique allows for the protection of sensitive areas on the wafer while effectively clearing copper from the perimeter.

Career Highlights

Throughout his career, Masato Kobayashi has worked with prominent companies such as Sharp Kabushiki Kaisha Corporation and Sharp Microelectronics Technology, Inc. His expertise in semiconductor technology has positioned him as a valuable asset in the industry.

Collaborations

Kobayashi has collaborated with notable colleagues, including Tue H Nguyen and Lawrence J Charneski, further enhancing his contributions to the field.

Conclusion

Masato Kobayashi's innovative work in semiconductor technology, particularly in the deposition and removal of copper, showcases his expertise and commitment to advancing the industry. His patents reflect a deep understanding of the complexities involved in semiconductor manufacturing.

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