Nagano, Japan

Masashi Sano


Average Co-Inventor Count = 6.0

ph-index = 5

Forward Citations = 332(Granted Patents)


Company Filing History:


Years Active: 2003-2009

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6 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Masashi Sano

Introduction

Masashi Sano is a prominent inventor based in Nagano, Japan. He has made significant contributions to the field of magnetoresistance technology, holding a total of 6 patents. His work focuses on enhancing the performance of magnetic devices, which has implications for various applications in electronics.

Latest Patents

One of Sano's latest patents is a GMR device having an improved free layer. This invention addresses the challenge of negative magnetostriction in structures that include copper laminates within CoFe or CoFe/NiFe composites. By applying an oxygen exposure treatment to the copper laminates, Sano has achieved a low positive magnetostriction constant, which can be further adjusted by varying the thickness of the free layer and the configuration of the copper laminates.

Another notable patent is the development of a FeTa nano-oxide layer as a capping layer for enhancing giant magnetoresistance in bottom spin valve structures. This invention features an NiCr seed layer-based bottom spin valve sensor element that incorporates a synthetic antiferromagnet pinned layer and a capping layer made of either a single nano-oxide layer or a bi-layer structure. The resulting elements demonstrate higher GMR ratios and lower resistances compared to previous designs.

Career Highlights

Masashi Sano is currently employed at Headway Technologies, Incorporated, where he continues to innovate in the field of magnetic technologies. His work has been instrumental in advancing the understanding and application of giant magnetoresistance, which is crucial for the development of more efficient electronic devices.

Collaborations

Sano has collaborated with notable colleagues, including Min Li and Simon H Liao. These partnerships have fostered a collaborative environment that enhances the research and development of new technologies.

Conclusion

Masashi Sano's contributions to the field of magnetoresistance technology are noteworthy and impactful. His innovative patents and collaborative efforts continue to push the boundaries of what is possible in electronic device performance.

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