Tokyo, Japan

Masashi Oura

This inventor holds 1 USPTO granted patent. Top assignee: Synaptics Japan Gk. Active years: 2018.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Masashi Oura. Retrieved from https://idiyas.com/inventor/masashi-oura

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 2.0

ph-index = 1


Company Filing History:


Years Active: 2018

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1 patent (USPTO):Explore Patents

Title: Masashi Oura: Innovator in Semiconductor Technology

Introduction

Masashi Oura is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique semiconductor device that enhances performance and efficiency.

Latest Patents

Masashi Oura holds 1 patent for a semiconductor device and its manufacturing method. This patent describes a semiconductor device that includes a first structure component comprising a first transistor and a first dummy pattern. Additionally, it features a second structure component that includes a second transistor and a second dummy pattern. Notably, the first structure component and the first dummy pattern have a first height, while the second structure component and the second dummy pattern have a second height that is lower than the first height.

Career Highlights

Masashi Oura is currently employed at Synaptics Japan Gk, where he continues to push the boundaries of semiconductor technology. His work is characterized by a commitment to innovation and excellence in engineering.

Collaborations

Masashi collaborates with Yasuhiro Fujii, a fellow innovator in the field. Together, they contribute to advancements in semiconductor devices and manufacturing methods.

Conclusion

Masashi Oura's contributions to semiconductor technology exemplify his dedication to innovation. His patent reflects a significant advancement in the field, showcasing his expertise and commitment to improving technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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