Kanagawa, Japan

Masashi Kobata


Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2020

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1 patent (USPTO):Explore Patents

Title: Masashi Kobata: Innovator in Nitride Semiconductor Technology

Introduction

Masashi Kobata is a notable inventor based in Kanagawa, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of nitride semiconductor substrates. His innovative work has led to advancements that enhance the performance of electronic devices.

Latest Patents

Kobata holds a patent for a nitride semiconductor substrate and the method for manufacturing the same. This patent presents a structure designed to increase the concentration of two-dimensional electron gas without compromising mobility. The substrate consists of three layers: the first layer is composed of InAlGaN, the second layer also consists of InAlGaN but has a different band gap, and the third layer is made of ABN, where A and B are elements from groups 13 and 14 of the periodic table.

Career Highlights

Kobata's career is marked by his dedication to advancing semiconductor technology. His work at Coorstek KK has positioned him as a key player in the industry. His innovative approaches have not only contributed to his company's success but have also influenced the broader field of electronics.

Collaborations

Kobata has collaborated with esteemed colleagues such as Yoshihisa Abe and Shintaro Miyamoto. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Masashi Kobata's contributions to nitride semiconductor technology exemplify the impact of innovative thinking in the field of electronics. His patent and collaborative efforts highlight the importance of teamwork in driving technological advancements.

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