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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10593790 B1

PDFFull Text
Date of Patent:
Mar. 17, 2020

Filed:

Feb. 20, 2018

Nitride semiconductor substrate and method for manufacturing the same

Applicant:

Coorstek Kk, Shinagawa-ku, Tokyo, JP;

Inventors:

Yoshihisa Abe, Kanagawa, JP;

Masashi Kobata, Kanagawa, JP;

Shintaro Miyamoto, Kanagawa, JP;

Assignee:

COORSTEK KK, Shinagawa-Ku, Tokyo, JP;

Attorney:

Buchanan Ingersoll & Rooney PC

Primary Examiner:

Changhyun Yi

Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 29/20 (2006.01); H01L 29/24 (2006.01); H01L 29/267 (2006.01); H01L 23/31 (2006.01); H01L 21/02 (2006.01); H01L 29/205 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7787 (2013.01); H01L 21/0217 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02271 (2013.01); H01L 23/3171 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/24 (2013.01); H01L 29/267 (2013.01); H01L 29/408 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01);
Abstract

A structure for increasing the concentration of two-dimensional electron gas without lowering mobility is provided. That is, a nitride semiconductor substrate is provided which includes a first layer, a second layer, and a third layer. The first layer has a composition of InAlGaN (0≤a1≤1, 0≤b1≤1, 0≤c1≤1, a1+b1+c1=1). The second layer is formed on the first layer. The second layer has a composition of InAlGaN (0≤a2≤1, 0≤b2≤1, 0≤c2≤1, a2+b2+c2=1) and has a band gap different from that of the first layer. The third layer is formed on the second layer and has a composition of ABN (A is a group 13 element, B is a group 13 element or a group 14 element, A≠B, 0<j<1).

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