Coorstek Kk

Masashi Kobata

Yoshihisa Abe

Shintaro Miyamoto

A structure for increasing the concentration of two-dimensional electron gas without lowering mobility is provided. That is, a nitride semiconductor substrate is provided which includes a first layer, a second layer, and a third layer. The first layer has a composition of InAlGaN (0&#x2264;a1&#x2264;1, 0&#x2264;b1&#x2264;1, 0&#x2264;c1&#x2264;1, a1+b1+c1=1). The second layer is formed on the first layer. The second layer has a composition of InAlGaN (0&#x2264;a2&#x2264;1, 0&#x2264;b2&#x2264;1, 0&#x2264;c2&#x2264;1, a2+b2+c2=1) and has a band gap different from that of the first layer. The third layer is formed on the second layer and has a composition of ABN (A is a group 13 element, B is a group 13 element or a group 14 element, A&#x2260;B, 0&#x3c;j&#x3c;1).

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Kanagawa, Japan

Masashi Kobata