Masashi Ishida

Title: Masashi Ishida and His Bipolar Transistor Invention.

Introduction

Masashi Ishida is an inventor associated with the Japan Science and Technology Agency in Tokyo, Japan. His recorded patent concerns a bipolar transistor designed to support finer emitter structures and improved high-frequency performance.

Latest Patents

The available information lists one patent for Ishida: “Bipolar transistor.” The invention describes a device with successively built-up subcollector, collector, base, and emitter layers. The subcollector has a projection and recesses, with the region above the projection forming the transistor’s intrinsic region. Insulating material is buried between the subcollector’s recesses and the collector layer, and the interface between those layers is held between the insulating layers. The base is made of a single-crystal layer and has a base electrode on the region serving as the extrinsic base, while the subcollector has a collector electrode. The design is intended to enable a narrower emitter, reduce parasitic capacitance between the base and collector, and improve high-frequency characteristics. Ishida’s listed patent portfolio comprises 1 patent.

Career Highlights

The supplied information identifies Ishida’s association with the Japan Science and Technology Agency. It does not provide further details about his roles, career history, or other inventions.

Collaborations

Yasuyuki Miyamoto and Tohru Yamamoto are identified as Ishida’s coworkers. The available information does not specify their roles in developing or patenting the bipolar transistor.

Conclusion

Masashi Ishida’s recorded invention focuses on a bipolar transistor structure intended to reduce parasitic capacitance and improve high-frequency performance.