The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2011
Filed:
Nov. 16, 2006
Yasuyuki Miyamoto, Nagareyama, JP;
Tohru Yamamoto, Yokohama, JP;
Masashi Ishida, Ota-ku, JP;
Japan Science and Technology Agency, Saitama, JP;
Abstract
A bipolar transistor () comprising a subcollector layer (), a collector layer (), a base layer () and an emitter layer () which are successively built up and having: the subcollector layer () formed with a projection (A) and recesses (B), an upper part above the projection constituting an intrinsic transistor region (A) of the bipolar transistor; insulator layer () buried between the recesses of the subcollector layer and the collector layer (); a boundary interface between the subcollector layer and the collector layer held between the insulator layers; the base layer () made of a single crystal layer and provided with a base electrode () on a region becoming an extrinsic base layer (B) of the base layer; and the subcollector layer provided with a collector electrode (). The bipolar transistor has advantages of its emitter made finer in width, a reduced parasitic capacitance between its base and collector and improved high-frequency characteristics.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile