Kiyosu, Japan

Masashi Abe

This inventor holds 2 USPTO granted patents. Top assignee: Fujimi Incorporated. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Masashi Abe. Retrieved from https://idiyas.com/inventor/masashi-abe-47b63lb6

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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2 patents (USPTO):Explore Patents

Title: Masashi Abe: Innovator in Polishing Composition Technology

Introduction: Masashi Abe is a notable inventor based in Kiyosu, Japan. He has made significant contributions to the field of semiconductor manufacturing through his innovative work in polishing compositions. His expertise has led to advancements that enhance the efficiency of semiconductor substrate production.

Latest Patents: Masashi Abe holds a patent for a polishing composition, polishing method, and method for producing semiconductor substrate. This invention aims to provide a polishing composition that can polish titanium nitride film at a higher removal rate compared to silicon oxide film. The composition includes abrasive grains, an inorganic acid, a surfactant with a polypropylene glycol structure, and hydrogen peroxide as an oxidizing agent. The pH of the composition is maintained between 2 and 4, ensuring high dispersion stability and a favorable selection ratio for polishing.

Career Highlights: Masashi Abe is currently associated with Fujimi Incorporated, where he continues to develop innovative solutions for the semiconductor industry. His work has been instrumental in improving the polishing processes that are critical for semiconductor fabrication.

Collaborations:

Conclusion: Masashi Abe's contributions to polishing composition technology have made a significant impact on the semiconductor industry. His innovative approach continues to drive advancements in manufacturing processes, showcasing the importance of research and development in this field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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