Hiratsuka, Japan

Masaru Yuyama


Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2007

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1 patent (USPTO):Explore Patents

Title: Masaru Yuyama: Innovator in Silicon Technology

Introduction

Masaru Yuyama is a prominent inventor based in Hiratsuka, Japan. He is known for his significant contributions to the field of semiconductor technology, particularly in the treatment of single crystal silicon. His innovative methods have paved the way for advancements in the manufacturing of high-quality silicon wafers.

Latest Patents

Masaru Yuyama holds 1 patent for his invention titled "Method for vanishing defects in single crystal silicon." This patent describes a method for eliminating defects in single crystal silicon, which involves subjecting the silicon prepared by the Czochralski (CZ) method to an oxidation treatment followed by an ultra-high temperature heat treatment at temperatures of at least 1300°C. Alternatively, it can involve treating a bare wafer in an oxygen atmosphere at temperatures between 1200°C and 1310°C. This method effectively eliminates void defects in single crystal silicon with high reliability.

Career Highlights

Yuyama has made significant strides in his career, particularly through his work at Sumco Techxiv Corporation. His expertise in silicon technology has been instrumental in enhancing the quality and performance of semiconductor materials. His innovative approaches have contributed to the advancement of the industry.

Collaborations

Masaru Yuyama has collaborated with notable colleagues, including Masahiko Ando and Shiro Yoshino. These collaborations have fostered a productive environment for innovation and have led to further advancements in their respective fields.

Conclusion

Masaru Yuyama's contributions to the field of semiconductor technology, particularly through his patented methods for treating single crystal silicon, highlight his role as a key innovator. His work continues to influence the industry and improve the quality of silicon wafers used in various applications.

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