Toyama, Japan

Masaru Kadoshima

This inventor holds 2 USPTO granted patents and 1 published patent application. Top assignee: Kokusai Electric Corporation. Active years: 2025-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Masaru Kadoshima. Retrieved from https://idiyas.com/inventor/masaru-kadoshima-bekdttla

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 2 

% Patents Active = 50.0

Average Co-Inventor Count = 2.0

ph-index = 1


Company Filing History:


Years Active: 2025-2026

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2 patents (USPTO):Explore Patents

Title: Masaru Kadoshima: Innovator in Semiconductor Processing

Introduction

Masaru Kadoshima is a prominent inventor based in Toyama, Japan. He has made significant contributions to the field of semiconductor technology. His innovative methods have paved the way for advancements in substrate processing.

Latest Patents

Kadoshima holds a patent for a "Method of processing substrate, method of manufacturing semiconductor device, recording medium, and substrate processing apparatus." This technique involves several steps: supplying a first gas to the substrate to form a modified layer, removing the modified layer with a second gas, and using an inert gas to remove a portion of the film through a sequential process. He has 1 patent to his name.

Career Highlights

Kadoshima is currently employed at Kokusai Electric Corporation, where he continues to develop innovative solutions in semiconductor manufacturing. His work has been instrumental in enhancing the efficiency and effectiveness of semiconductor devices.

Collaborations

Kadoshima collaborates with various professionals in his field, including his coworker Atsushi Sano. Their combined expertise contributes to the advancement of semiconductor technologies.

Conclusion

Masaru Kadoshima's contributions to semiconductor processing highlight his role as an influential inventor in the industry. His innovative methods and dedication to research continue to impact the field positively.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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