Masao Matsumine

Title: Masao Matsumine: Innovator in SOI Substrate Technology

Introduction

Masao Matsumine is a notable inventor based in Nagano, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the production of Silicon-On-Insulator (SOI) substrates. With a total of 3 patents to his name, Matsumine's work has advanced the capabilities of SOI technology.

Latest Patents

Matsumine's latest patents include a method for producing an SOI substrate and a method for producing an SOI wafer. The method for producing an SOI substrate involves preparing a bond wafer and a base wafer composed of single crystal silicon wafers. It includes forming an oxide film on at least one of the wafers, bonding them via the oxide film, and performing heat treatments to enhance bonding strength and suppress slip dislocations. The method for producing an SOI wafer focuses on forming an ion-implanted damaged layer by ion-implanting a neutral element into the silicon, ensuring sufficient gettering ability while minimizing leak failures and degradation of oxide dielectric breakdown voltage.

Career Highlights

Matsumine is currently associated with Shin-Etsu Handotai Co., Ltd., a leading company in the semiconductor industry. His innovative approaches have positioned him as a key figure in the development of advanced SOI technologies.

Collaborations

Throughout his career, Matsumine has collaborated with esteemed colleagues such as Kazuhiko Yoshida and Hiroshi Takeno. These collaborations have further enriched his research and development efforts in semiconductor technology.

Conclusion

Masao Matsumine's contributions to SOI substrate technology have been pivotal in advancing semiconductor manufacturing processes. His innovative methods continue to influence the industry and enhance the quality of SOI layers produced.