The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 2012
Filed:
Apr. 23, 2007
Kazuhiko Yoshida, Nagano, JP;
Masao Matsumine, Nagano, JP;
Hiroshi Takeno, Gunma, JP;
Shin-Etsu Handotai Co., Ltd., Tokyo, JP;
Abstract
The present invention is a method for producing an SOI wafer comprising at least a step of forming an ion-implanted damaged layer by ion-implanting a neutral element electrically inactive in silicon from one surface of the base wafer or the bond wafer, in which ion-implanting in the step of forming the ion-implanted damaged layer is performed at a dosage of 1×10atoms/cmor more and less than 1×10atoms/cm. As a result, there may be provided a method for producing an SOI wafer having sufficient gettering ability while the suppression of leak failure, degradation of oxide dielectric breakdown voltage or the like is provided.